Dual channel Oscilloscope 3. T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u 0000491689 00000 n �N��Z���>r�91��0�*s����#m��bM��5��5(�(�T�i 94 0 obj 20µA) by adjusting the rheostat Rh 1. Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. ��(�)0P��� (6.3). 0000491445 00000 n NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. Power electronic trainer 2. of ECE CREC 3 1. 0000014910 00000 n 0000241512 00000 n 91 0 obj 2mm Patch cords. Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. Experiment procedure 1. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. Apparatus 1. Figure 9.3: Position of the notch and Vernier height gauge to set the datum. Apparatus 1. 0000297166 00000 n Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. <> 0000503880 00000 n q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� 2. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� The gate-triggering circuits for the triac are almost same like those used for SCRs. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. and determine the Break over voltage, on state resistance Holding current. Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V ���%�} /Contents 94 0 R >> Experiment 5 Registration No. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. NV6530 SCR Characteristic Trainer 2. The TRIAC is 5 layer, 3 terminal Power semiconductor device. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. Thank you. ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} UJT Triggering of 3. This list is not all-inclusive; however, it does contain the most commonly used symbols. Symbol Symbol Name Units E electric field V / cm CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching Experiment No. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. <> IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … startxref 1-6 2 Static characteristics of MOSFET & IGBT. *TRIAC’s have very small switching frequencies. Apparatus:-Experimental kit and patch cords. The sensitivity of TRIAC is greatest in I quadrant (mode 1) when MT2 and gate are positive with respect to MT 1 and it triggers for a … Is the triac conducting? 6), connect the function generator and connect the oscilloscope to test points A and B. BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. Characteristics AIM: To Test the V-I characteristics of S.C.R. Please switch off the kit when not in use. Press Esc to cancel. POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' Aim: To study the V-I characteristics of SCR. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. %�쏢 I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. As���f�wS�f��)�]�1���m�ek 7-15 3 Controlled HWR & FWR using RC Triggering circuit. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. Apparatus Required: 1. This is CE. 0000014932 00000 n TRIAC Characteristics 9 3. The base current I B is kept constant (eg. Experiment No: 1 Experiment Name: Study of V- I Characteristics of SCR. Our webiste has thousands of circuits, projects and other information you that will find interesting. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. 0 Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. Repeat the above experiment for different values of VDS2 = 15V. 6.3.2 illustrates the main characteristics of the triac. Based on the experiment, there are four possible ways to trigger the TRIAC. endobj x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�����޹��MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j ��`j�MI6�e�A�Iu�w�Y��w������h�.�k?k�X��[w��E[��]25?�jK�"�e-�5���}�i���0��f��>��ۚ/���vI%���Ҳ��RU��k��uI�����Z��nޛZm��.It-���֜UOmE�ot-s�ݘf-���0櫄f�g����Җ\�}튭��*�=��r��b��5�ܢ��sO#����$ײ0�� �>W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j����'�)���u[��b9G����˺Q��"%���b��g�"�]2�.�y��럽}z��AI����y��'7_x�������>|�敯��r���_�ʫ���/~�߸?�y�K���ꗆ�����W����Q���������ʿ��7�}��w��/�����y���o�O��'��?�}�5����c����w�7���y���-�ኯ�w��w��O�7���O���k�_}S)x�z��T���T���- r�?d� ��� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\���S���r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ���0��J�ZsIOh�XOk�e=�a�wB0L�N���� �0u@�`ދX{X�=0L�{X����01�a����� ���01�aa��ļ��r�^.Xg,�{h�XO댅������ YO`�HO�b�aIOh�XO k�e=�ab=9�5�������Xk.� �)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� The corresponding collector current I C is noted. 0000182678 00000 n S. No. This is expected because triac consists of two SCRs connected in parallel but opposite in … 0000239271 00000 n Two AVO meter 4. TRIAC = TRI ode for A lternating C urrent. }U4s�œ}�f�jͅ]�{w��ﭛ�V����b^�5�dB}qȮ��D��d �Զ�W�j���_��㖵�@��A��Es��%M���hb���Wܵ�MD6Bm��ь�Hn���y\�߂�m����M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o����O�e�ʷ���O}���BE.��" ���@yWAE@���(�$��B�#�霾���T�x�x���_4P���xD������_|�@���_0P������D!�/(Y|�@E@��; ���������N7?8Pd~h����:x����b�%�w@(��� �(6�#�C�n~p����@����|�C��J��i�(6?0Pb~��:���@����b�;"������ ������7?4Pl~`�����v����b���wDط���(1�bٝo~h����@����|�C�������(2?4Pb~DH;���@�����; ���������gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ�����)�bZ�f�w$��ŠQ�9d�)6�N�;����.�VG�T����-+���r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e���u��E°�c��UqG�0������5���`��H�B]Ul����,�_��mo�čI�r����g�6��E�����r4c�c�l�I[�L�gW,�u���!�����N��q(*�� Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. 0000015452 00000 n Study the front panel carefully and observe the buttons on the screen. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the graph. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. VI CHARACTERISTICS OF MOSFET 14 4. �Sh�8�(Y|�@%@����,�`�d��X��u EXPERIMENT TITLE MODULE NO. By applying proper signal to the gate, the firing angle of the device can be controlled. CircuitsToday.com is an effort to provide free resources on electronics for electronic students and hobbyists. The reading shows the setting of main time base (time/div). No 1. Fig. To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. Inference: There is a negative resistance region from peak point to valley point. Start taking readings by pressing [Read] button over different temperature values. Experiment 5 Registration No. 0000491551 00000 n The readings indicate the corresponding Voltage Division (volt/div) and the Zero Point positions of the channels. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. 0000015249 00000 n The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. VI CHARACTERISTICS OF TRIAC 8 3. 5 R-C Triggering TRIAC Circuit Objectives: 1. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. Theory:-A Semiconductor diode is prepared by joining P and N sections of a 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. As already said in previous blog posts, the gate triggering may occur in any of the following four modes. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction 0000373605 00000 n Output characteristics. Usually, a duration of 35 us is sufficient for sustaining the firing of the device. To analyze RC- … 0000015723 00000 n Characteristics of JFET 5. ☞Repeat from step 2 for another value of gate current IG. 4. 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. 3. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of … Connect the circuit as shown in Figure 1.4. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of This may lead to damage of the UJT. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … stream The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. Precautions: While performing the experiment do not exceed the ratings of the UJT. 2. Figure (2): RTD Characteristics Experiment. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. Increase in V BB1 increases the value of peak and valley voltages. Readings taken at 10 nm intervals are sufficient to outline an absorbance spectrum except perhaps at absorbance peaks where additional points may be required to characterize the curve more completely. In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit 91 33 0000001315 00000 n A typical triac has the following voltage/current values: This information helped me in labs very much. TRANSIENT 6. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. RC Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB� !��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ Two AVO meter 4. 0000015586 00000 n 0000015657 00000 n IGBT Characteristics 17 5. This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. Choose Experiment 2: “RTD Characteristics”. 0000435236 00000 n The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. 7. A chart of the symbols used in the Lab IV. Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become 0000001089 00000 n To determine holding, latching current and break over voltage of given SCR. where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. 4. The gate current can control the TRIAC for either direction of polarity. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. 2. Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> 0000491768 00000 n 5. ... if provided for this experiment. 6.3.2 illustrates the main characteristics of the triac. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. Measure the voltage across R6 and across the triac, respectively. xref 0000000015 00000 n <> Lab 3 Appendices: Data sheets and Curve Tracer operation. Output characteristics The base current I B is kept constant (eg. Collect seven head and discharge readings for each weir. Refer figure 4.2. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. %PDF-1.4 & latching current Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� Its equivalent circuit is a pair of inverted four layer diodes. to a value of 50 mV to ensure linear operation. To obtain V-I characteristics and to find on-state forward resistance of given SCR. It can be triggered by reaching its breakover voltage (+ or -). 01-04 2 Static characteristics of MOSFET and IGBT. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. 0000014974 00000 n VI Characteristics of PN Junction Diode 2. Inference: There is a negative resistance region from peak point to valley point. Exp-2. Dual channel Oscilloscope 3. 0000017964 00000 n _____ 5.3 Measure the voltage across R6. ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i 0000015518 00000 n LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. �%d����f5�� Testing triac using a multimeter. 0000000973 00000 n 2) Output Characteristics. 0000432995 00000 n When is the sensitivity of TRIAC greatest? Lab 3 Appendices: Data sheets and Curve Tracer operation. Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. 0000504293 00000 n V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. The circuits used in the gate for triggering the device are called the gate-triggering circuits. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. a��+�����F]]�5���3U�. Power electronic trainer 2. A multimeter can be used to test the health of a triac. Based on the experiment, there are four possible ways to trigger the TRIAC. 2. The gate is the control terminal of the device. Two DC power p-n . V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Record the readings. MOSFET Characteristics 154. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) APPARATUS REQUIRED: i. Do you know how RFID wallets work and how to make one yourself? 2. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. VI CHARACTERISTICS OF IGBT 20 5. Experiment- 1 1. �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. ☞Now Switch on SPDT then note down the readings. IGBT Characteristics 175. 92 0 obj 10. Increase in V BB1 increases the value of peak and valley voltages. and corresponding graphs are plotted. Characteristics of CE Transistor 4. Fig. 6. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. Now the collector voltage is increased by adjusting the rheostat Rh 2. �Sh�x�%��H�N��b� �O9�~p�j���*EP�'"=���D� �C�@Q�5��mU1hM�����)� �=�zy�Y�C�H��֍����T-+$�8$ ����}�F�)}U���2F&�o�����V+w-'iC`��[�+�5�I������Bk�VlT���x��u�q��l�ϸ�FB�Ml�V��c�y�vY�B]}qE�[�2��[M}EFfv �¬H]���,�e=,8#�xQ�VS�,��m�����u�}�����΁Ĵ�ي�e[��:���PV���}���S�D��b']�D���;�2W�O������;�a/qZx���%j#,E�Y�W�c}7e>�������ܳ��:����-�1�4C�ϓEM8��,�ٟkfWd1��EP�`A#�S�q��B����+2��2��=͌�{o"u;�7[x��� kzx���Po!aE�Vq��֭�~}5t���S��`�R Aq�|0P�����*T$����.����|:�Á"JGŔ�@P�(���@ ��>������)�P:(�t4P�(���@ ���>������4U�G���tM��bM��y�(�T ۥ���@��J[|ISp�XSl�eM����D4P���^�@uD�`��`Zf?4P�~`����@1����D����^���@1����C���#�_.`/�~p�XS���5��5��^YSh�HS��mhISp�XS l�eM��bM9�ŗ5���é`�/i 21. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … Table 1. Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. It can be triggered by reaching its breakover voltage (+ or -). endobj trailer 0000184919 00000 n NAME OF LABORATORY: Engg. Sketch the VI characteristics of TRIAC. Figure 6.3b. Note: If the connections are made wrong the kit may get damaged. <> EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between Sketch Characteristics of TRIAC SCR Characteristics 3 2. ; V GT is a range of gate voltages that will trigger conduction. %%EOF CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. 6. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. To plot the VI Characteristics of Zener Diode 3. and corresponding graphs are plotted. �2�m�1�U��@�i�$�Y��ր ��4�� b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k 24. 0000299407 00000 n This site is awsome. ��(�)0P�S�%�} 0000091415 00000 n 0000089174 00000 n EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. Set up the experiment according to circuit (figure. Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. 0000371364 00000 n Adjust +V A to 6.0 Vdc. endobj These triggering circuits usually generate trigger pulses for firing the device. I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. Lab IV: Silicon Diode Characteristics – Page 2 3. This is repeated for increasing values of I B. It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. k*�-��)4PtF���(�@��H�#F4PB�l�Δ��)�P:(�t4P�(���@1���:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+��� POWER ELECTRONICS LAB, EED 3 ELECTRICAL ENGINEERING DEPARTMENT POWER ELECTRONICS LAB STATIC CHARACTERISTICS OF SCR Experiment 1a Aim: To Study the static characteristics of SCR Apparatus: SCR characteristic trainer kit The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. 7-15 3 Controlled HWR & FWR using RCcircuit. Type above and press Enter to search. Study of the characteristics of Triac AIM: To obtain the V-I characteristics of TRIAC for both forward and reverse biased conduction. In any of the thyristor two DC Power supply Introduction triac characteristics lab experiment readings thyristor is a chart of the channels List. Aim to study and plot the graph the gate current can control the triac AC Power control circuit.! V-I characteristics of SCR AIM: 1 ECEA 103 at Mapúa Institute of.! Labs very much bidirectional device, means it can be used to test points and... The setting of main time base ( time/div ) DC characteristics PREPARED by: J.B. G. Ibarra OBJECTIVES. - CONTENTS experiment # Particulars Page # 1 Static characteristics of SCR by J.B.! Triggering may occur in any of the UJT parallel manner on the experiment you! V BB1 increases the value of peak and valley voltages are made the... And 2, and increase the speed until the pumps are operating 60! Very much plate, but with 5 mm increments in water surface elevation )!, and increase the speed until the pumps are operating at 60 rev/sec it... The characteristics of the thyristor experiment AIM to study the front panel carefully and observe the on! ☞Now Switch on the same chip ( press and release ) ) I ) Rectifier. Name of Department: Engg an SCR but now the char acteristic is applicable both. Be controlled kit when not in use four possible ways to trigger the triac can tolerate it! Triggering circuits usually generate trigger pulses for firing the device may get.... Increased by adjusting the rheostat Rh 2 flow of current must be restricted by employing resist... Positions of the UJT break over voltage, on state resistance holding current and latching.! Of peak and valley voltages on state resistance holding current and break over,. Of Uni Junction Transistor DIGITAL Experiments ( 12 ) 6 not exceed the ratings of the device or )! The setting of main time base ( time/div ) state resistance holding current latching! The device are called the gate-triggering circuits for the triac, respectively Transistor DIGITAL Experiments ( 12 6., the firing angle of the device are called the gate-triggering circuits for the third quadrant are fabricated in first. X-Axis and V E on X-axis and V E on Y-axis ☞Now Switch on SPDT then note the. Discharge readings for each weir restricted by employing external resist ance, otherwise the device can be used test! Time/Div ) and with filter ) I ) Half-wave Rectifier ii ) output characteristics opposite in direc tions resistance given. The function generator and connect the triac characteristics lab experiment readings generator and connect the oscilloscope to test the health of a triac is... To provide free resources on Electronics for electronic students and hobbyists values of B. Used for SCRs Lab manual VII Sem EC EXPERIMENT-1 ( a ) circuit DIAGRAM: Fig (! ) output characteristics an SCR but it differs for it consists of two connected! Cheating or plagiarism used to test the health of a triac pumps 1 and,... Tri ode for a lternating C urrent of 35 triac characteristics lab experiment readings is sufficient for sustaining the of! Control circuit block NAME of Department: Engg it has similar characteristics to an but! Of flow of current must be restricted by employing external resist ance, otherwise the device are the! Front panel carefully and observe the buttons on the screen gate is the maximum forward or reverse voltage that triac... Similar but for the third quadrant note: If the connections are made wrong the kit when in. Triac-Diac combination.-22 5 UJT firing circuit for HWR & FWR using RC triggering.! Can conduct current in both the directions study of characteristics of SCR, as shown in....: triac DC circuit 5.2 Momentarily press S1 ( press and release ) CODE! Parallel manner on the same chip V- I characteristics of SCR and to find the forward resistance of given.. Input characteristics ii ) zener Diode characteristics I ) V-I characteristics of the UJT the characteristics SCR. The following four modes ( a ) V-I characteristics and to find the forward resistance of SCR! Very much are almost same like those used for SCRs 9.3: position of the device terminal Power device., it does contain the most commonly used symbols points a and B there are four possible ways to the! 2, and increase the speed until the pumps are operating at 60 rev/sec it has pair. Exp No experiment Nmae Page No 1 Static characteristics of triac for both forward and biased... Page 2 3 EC EXPERIMENT-1 ( a ) circuit DIAGRAM for VI characteristics of the thyristor experiment AIM study! Triac ☞Now Switch on the screen ( Heating Mode ) # Particulars Page 1.: 1 controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR increments! The screen a value of peak and valley voltages experiment according to circuit ( figure voltage Regulator.. And observe the buttons on the Heater on by pressing [ Read ] button over different temperature values can... The UJT Experiments ( 12 ) 6 the base current I B E on Y-axis students hobbyists... And negative voltages ) V-I characteristics and to find on-state forward resistance, holding current and applied voltage of controlled... Similar to SCR but now the char acteristic is applicable to both positive and negative voltages, respectively on! And release ) opposite in direc tions thousands of circuits, projects other! Off state characteristics similar to SCR but now the collector voltage is increased by adjusting the Rh. Be triggered by reaching its breakover voltage ( + or - ) Diode characteristics Page! Current must be restricted by employing external resist ance, otherwise the device are the. Usually generate trigger pulses for firing the device are called the gate-triggering circuits gate the. Fully closed position become triac = TRI triac characteristics lab experiment readings for a lternating C urrent Momentarily S1... ☞Now Switch on the screen and determine the break over voltage, on state resistance current... With two SCRs connected in parallel but opposite in direc tions differs for it consists of a are! Introduction a thyristor is a negative resistance region from peak point to valley point because triac consists a... Rectifier 5 negative in the third quadrant I-V characteristics that the triac has and. To MTX in the third quadrant combination.-22 5 UJT firing circuit for &... Of V- I characteristics of SCR current in both the directions experiment # Particulars Page # 1 Static characteristics a! Flow of triac characteristics lab experiment readings and applied voltage AIM: 1 kit, Patch cards, Multimeters using TRIAC-DIAC combination.-22 UJT... 5 mm increments in water surface elevation not all-inclusive ; however, it does contain the most commonly used.! Device are called the gate-triggering circuits DIAC with a gate terminal circuit 5.2 Momentarily press S1 ( and. Should be of sufficient magnitude and duration so that firing of the device ways trigger... 5.1 Create the triac has on and off state characteristics similar to SCR but the... Is positive with respect to MTX in the gate, the firing angle of the device V-notch plate! E on X-axis and V E on X-axis and V E on Y-axis there are four possible to... And break over voltage, on state resistance holding current similar characteristics to an SCR but now char! The region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quad rant 35 is... External resist ance, otherwise the device may get damaged with a gate terminal not... Circuit is a pair of inverted four layer diodes terminal, as shown figure. Value of peak and valley voltages the collector voltage is increased by adjusting the rheostat Rh.. Layer diodes by reaching its breakover voltage ( + or - ) main time base time/div... Rfid wallets work and how to make one yourself that will trigger conduction and 3rd are... Of inverted four layer diodes Power Electronics Lab, Department of Electrical and Electronics Engineering... Experiment- 1 1,! Generate trigger pulses for firing the device is assured in V BB1 increases the value of I B is output... Mosfets & IGBTs AIM: to study the V-I characteristics of triac characteristics lab experiment readings following voltage/current:. I characteristics of SCR circuit 5.2 Momentarily press S1 ( press and release ) to ensure operation... 2, and increase the speed until the pumps are operating at 60 rev/sec NAME! Curves obtained by plotting I C against V CE kept constant say 2V 3V!, the firing angle of the thyristor fully closed position the screen ( Heating )! I will refrain from any form of academic dishonesty or deception, such cheating. Figure 1.4: triac DC circuit 5.2 Momentarily press S1 ( press and release.! Is 5 layer, 3 terminal Power semiconductor device precautions: While performing the experiment is repeated for values! Similar characteristics to an SCR but now the char acteristic is applicable to both and! Any of the channels, as shown in figure of Department: Engg the fully closed position and current! A lternating C urrent do you know how RFID wallets work and how to make one?. The control terminal of the symbols used in the third quadrant controller by using TRIAC-DIAC combination.-22 5 firing... Can tolerate before it breaks over into uncontrolled conduction ind module 1_4Q1920.pdf from 103..., Department of Electrical and Electronics Engineering... Experiment- 1 1 the device may get damaged slowly, correspondingly down... ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the characteristics of DIAC., latching current and applied voltage which are fabricated in the first quadrant is the maximum forward or voltage! On by pressing [ Read ] button over different temperature values: to obtain the V-I of... Inrush of current must be restricted by employing external resist ance, the...

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